By Heimo Uhrmann, Robert Kolm, Horst Zimmermann
Ranging from the fundamentals of analog filters and the terrible transistor features in nanometer CMOS 10 high-performance analog filters constructed through the authors in one hundred twenty nm and sixty five nm CMOS are defined generally. between them are gm-C filters, current-mode filters, and energetic filters for system-on-chip awareness for Bluetooth, WCDMA, UWB, DVB-H, and LTE functions. For the lively filters a number of operational amplifier designs are defined. The ebook, additionally, incorporates a overview of the most recent kingdom of analysis on low-voltage low-power analog filters. to hide the subject of the e-book comprehensively, linearization matters and size tools for the characterization of complicated analog filters are brought moreover. various tricky illustrations advertise a simple comprehension. This ebook might be of worth to engineers and researchers in in addition to scientists and Ph.D scholars at universities. The e-book is usually recommendable to graduate scholars specializing on nanoelectronics, microelectronics or circuit engineering.
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Additional info for Analog Filters in Nanometer CMOS (Springer Series in Advanced Microelectronics)
Especially for low-passes with a high quality factor or for bandpasses, a FOM is defined by N · SFDR · fC · Q P where Q is the quality factor of the filter. 3 State-of-the-Art There is a large amount of publications on filters in micrometer and submicrometer CMOS and BiCMOS [21, 22, 31–84, 90]. 35 µm CMOS is presented. The OTA is realized by transistors operating in triode region. 3 V and has a DR of 52 dB. In  a 4th-order Chebyshev low-pass filter for a multicarrier WCDMA receiver is described.
13) Due to process parameter variations, the bias conditions (I1 and I2 ) where the maximum linearity is achieved can be slightly different. This cancellation technique works only in one certain operation point. Due to the fact that mismatch shifts the operation point, the third harmonics are not canceled completely. 14) 32 4 Operational Transconductance Amplifiers (OTAs) Fig. 5 dB. This is theoretically the minimum achievable value of the distortions. In  an OTA is described which is realized by means of a Gm input stage in combination with passive resistors (shown in Fig.
In  a 4th-order Chebyshev low-pass filter for a multicarrier WCDMA receiver is described. 25 µm SiGe BiCMOS process. 2 µVrms which lead to an estimated dynamic range of 94 dB. 25 µm CMOS process is described in . 5 V and consumes 7 mA, the IIP3 is 32 dBm, the output noise is 130 nV/ Hz which leads to an estimated DR of 75 dB. A compact 2nd-order Gm -C biquad structure, which was introduced by  is shown in Fig. 2. Each transistor pair (M1/M2, M3/M4, M5/M6) works here as an OTA (OTA1, OTA2, OTA3) as depicted on the right side in Fig.
Analog Filters in Nanometer CMOS (Springer Series in Advanced Microelectronics) by Heimo Uhrmann, Robert Kolm, Horst Zimmermann